Schroder
Dieter K. Schroder
- Regents' Professor
- Electrical Engineering
- Bio
- Expertise
- Education
- Honors & Distinctions
- Selected Publications
Dieter Schroder joined the ASU faculty in 1981 after 13 years at the Westinghouse Research Labs. He has published two books, 176 journal articles, nine book chapters, and 167 conference presentations, edited 11 books, holds five patents and has graduated 61 MS students and 41 PhD students.
Semiconductor devices, photovoltaics, defects in semiconductors, semiconductor material and device characterization, electrical/lifetime measurements, low-power electronics, device modeling, MOS devices.
University of Illinois 1968
McGill University 1964
McGill University 1962
IEEE Life Fellow, IEEE van der Ziel Award, 2007, Distinguished National Lecturer for the IEEE Electron Device Society, 1993-2007; ASU College of Engineering Teaching Excellence Award, 1989, 1998, 2001; National Technical University Outstanding Instructor, 1991-2003; University Continuing Education Association Faculty Service Award, 1997; ASU College of Extended Education Distance Learning Faculty Award, 1998; IEEE Meritorious Achievement Award in Continuing Education Activities, 1998; IEEE Phoenix Section: Outstanding Faculty Member, 2000.
D.K. Schroder, “Nano Characterization of Materials,” Int. J. High Speed Electron. Syst. 18, 861-878, Dec. 2008.
D.H. Baek, S.B. Kim and D.K. Schroder, “Epitaxial Silicon Minority Carrier Diffusion Length by Photoluminescence,” J. Appl. Phys. 104, 054503 1-5, Sept. 2008.
V. Kushner, K. Park, D. K. Schroder, and T. J. Thornton, “Low Frequency Noise Spectroscopy of SIMOX and Bonded SOI Wafers,” IEEE Trans. Electron Dev., 54, 3378-3382, December 2007.
K. Park, M. Canonico, G.K. Celler, M. Seacrist, J. Chan, J. Gelpey, K. Holbert, S. Nakagawa, M. Tajima, and D.K. Schroder, “Effects of High Temperature Anneals and 60Co Gamma Ray Irradiation on Strained Silicon-on-Insulator (sSOI),” J. Appl. Phys., 102, 074507 1-5, October 2007.
M.J. Marinella, D.K. Schroder, T. Isaacs-Smith, A.C. Ahyi, J.R. Williams, G.Y. Chung, J.W. Wan, and M.J. Loboda, “Evidence of Negative Bias Temperature Instability in 4H-SiC Metal Oxide Semiconductor Capacitors,” Appl. Phys. Lett. 90, 253508 1-3, June 2007.
D.K. Schroder, “Negative Bias Temperature Instability – What Do We Understand?,” Microelectron. Reliab. 47, 841-852, June 2007.
D.K. Schroder, “Some Recent Advances in Contactless Silicon Characterization,” in High Purity Silicon 9, Eds C. Claeys, R. Falster, W. Watanabe, P. Stallhofer, Electrochem. Soc. ECS Transactions 3, 321-337, 2006.
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