Yu
PDF versionHongbin Yu
Hongbin Yu joined the ASU faculty in 2005. He received his PhD in physics in 2001 from the University of Texas at Austin, and his MS in physics in 1996 from Peking University, P.R. China, and conducted his post-doctoral research at California Institute and Technology and University of California at Los Angeles.
Nanostructure and nano device fabrication and characterization, transport in nanostructures and molecules, quantum size effect in metallic and semiconducting nanostructures, surface and interface physics and chemistry.
University of Texas - Austin 2001
Peking University 1996
Graduate Research Award, American Vacuum Society, 2001.
D. Eom, C.-S. Jiang, H. Yu, J. Shi, Q. Niu, Ph. Ebert, and C.-K. Shih, “Scanning Tunneling Spectroscopy of Ag films: The Effect of Periodic vs. Quasiperiodic Modulation,” Phys. Rev. Lett., 97, 206102, 2006. H. Yu, L. J. Webb, J. R. Heath, and N. S. Lewis, “Scanning Tunneling Spectroscopy of Methyl- and Ethyl- terminated Si(111) Surfaces,” Appl. Phys. Lett. 88, 252111, 2006. S. D. Solares, H. Yu, L. J. Webb, N. S. Lewis, J. R. Heath, and W. A. Goddard III, “Chlorination-Methylation of the Hydrogen- Terminated Silicon(111) Surface Can Induce a Stacking Fault in the Presence of Etch Pits,” J. Am. Chem. Soc 128, 3850, 2006. H. Yu, L. J. Webb, R. S. Ries, S. D. Solares, W.A. Goddard III, J. R. Heath, and N. S. Lewis, “Low Temperature STM Images of Methyl-Terminated Si(111) Surfaces,” J. Phys. Chem. B, 109, 671, 2005. T. Feng, H. Yu, M. Dicken, J. R. Heath, and H. A. Atwater, “Probing the Size and Density of Silicon Nanocrystals in Nanocrystal Memory Device Applications,” Appl. Phys. Lett., 86, 033103, 2005. C. S. Jiang, S. C. Li, H. Yu, D. Eom, X. D. Wang, P. Ebert, J. F. Jia, Q. K. Xue, and C. K. Shih, “Building Pb Nanomesas with Atomic-layer Precision,” Phys. Rev. Lett., 92, 106104, 2004.
