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Thornton

Trevor Thornton

  • Professor
School of Electrical, Computer, and Energy Engineering
  • Electrical Engineering
  • Bio
  • Expertise
  • Education
  • Honors & Distinctions
  • Selected Publications

Trevor Thornton joined the faculty in 1998 after having spent eight years at Imperial College in London and two years as a member of the technical staff at Bell Communications Research, New Jersey. He invented the split-gate transistor, which was used to demonstrate the quantization of the ballistic resistance. He is currently the Director of the Center for Solid State Electronics Research which manages the ASU NanoFab, the Southwest regional node of the NSF supported National Nanofabrication Infrastructure Network.

Nanostructures, molecular electronics and sensors, micro-electro-mechanical systems (MEMS), silicon-on-insulator MESFETs.

Ph.D. Physics
Cambridge University 1987
M.S. Physics
Cambridge University 1985

Recipient of ASU Co-Curricular Programs Last Lecture Award, 2001.

W. Lepkowski, J. Ervin, S. J. Wilk, and T. J. Thornton, "SOI MESFETS Fabricated Using Fully Depleted CMOS Technologies," IEEE Electron Device Letters, vol. 30, 678 - 680, 2009.

B. R. Takulapalli, G. M. Laws, P. A. Liddell, J. Andreasson, Z. Erno, D. Gust, and T. J. Thornton, "Electrical Detection of Amine Ligation to a Metalloporphyrin via a Hybrid SOI-MOSFET," J. Am. Chem. Soc., vol. 130, 2226 - 2233, 2008.

S.J. Wilk, L. Petrossian, M. Goryll, T.J. Thornton, S. M. Goodnick, J. M. Tang, and R. S. Eisenberg “Integrated Electrodes on a Silicon Based Ion Channel Measurement Platform,” Biosensors and Bioelectronics, vol. 23, 183-190, 2007.

L. Petrossian, S. Wilk, P. Joshi, S. Hihath, S. Goodnick, and T. Thornton, “Fabrication of Cylindrical Nanopores and Nanopore Arrays in Silicon-on-insulator Substrates,” J. Microelectromechanical Systems, vol. 16, 1419 - 1428, 2007.

J. Ervin, A. Balijepalli, P. Joshi, V. Kushner, J. Yang, and T. J. Thornton, “CMOS-Compatible SOI MESFETs With High Breakdown Voltage,” IEEE Transactions on Electron Devices, vol. 53, 3129-3135,  2006.